Datasheet HM6N70F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HM6N70F	silicon N-channel Enhanced VDMOSFETs HM6N70/F General Description： HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for sys	H&M Semiconductor

HM6N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HM6N70F	silicon N-channel Enhanced VDMOSFETs HM6N70/F General Description： HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc	H&M Semiconductor
HM6N70	silicon N-channel Enhanced VDMOSFETs HM6N70/F General Description： HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc	H&M Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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