Datasheet HM5N60K Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HM5N60K	600V N-Channel MOSFET HM5N60K / HM5N60I HM5N60K / HM5N60I 600V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and	H&M Semiconductor

HM5N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HM5N60F	N-CHANNEL MOSFET N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET HM5N60 主要参数 MAIN CHARACTERISTICS 封装 Package ID .0 A VDSS 600 V Rdson（@Vgs=10V） 2.4Ω Qg 13.3nC 用途 z 高频开关电源 z 电子镇流器 z UPS 电源 APPLICATIONS z High efficiency switch mode power s	H&M Semiconductor
HM5N60K	600V N-Channel MOSFET HM5N60K / HM5N60I HM5N60K / HM5N60I 600V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchi	H&M Semiconductor
HM5N60	N-CHANNEL MOSFET N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET HM5N60 主要参数 MAIN CHARACTERISTICS 封装 Package ID .0 A VDSS 600 V Rdson（@Vgs=10V） 2.4Ω Qg 13.3nC 用途 z 高频开关电源 z 电子镇流器 z UPS 电源 APPLICATIONS z High efficiency switch mode power s	H&M Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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