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Datasheet HM5N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | HM5N60 | N-CHANNEL MOSFET N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET
HM5N60
主要参数 MAIN CHARACTERISTICS
封装 Package
ID .0 A VDSS 600 V Rdson（@Vgs=10V） 2.4Ω Qg 13.3nC
用途
z 高频开关电源 z 电子镇流器 z UPS 电源
APPLICATIONS z High efficiency switch
mode power supplies z Electronic |
 H&M Semiconductor |
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| 4 | HM5N60 | N-CHANNEL MOSFET N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET
HM5N60
主要参数 MAIN CHARACTERISTICS
封装 Package
ID .0 A VDSS 600 V Rdson（@Vgs=10V） 2.4Ω Qg 13.3nC
用途
z 高频开关电源 z 电子镇流器 z UPS 电源
APPLICATIONS z High efficiency switch
mode power supplies z Electronic |
H&M Semiconductor |
|
| 3 | HM5N60F | N-CHANNEL MOSFET N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET
HM5N60
主要参数 MAIN CHARACTERISTICS
封装 Package
ID .0 A VDSS 600 V Rdson（@Vgs=10V） 2.4Ω Qg 13.3nC
用途
z 高频开关电源 z 电子镇流器 z UPS 电源
APPLICATIONS z High efficiency switch
mode power supplies z Electronic |
H&M Semiconductor |
|
| 2 | HM5N60I | 600V N-Channel MOSFET HM5N60K / HM5N60I
HM5N60K / HM5N60I
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and |
H&M Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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