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Datasheet HM2301 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1HM2301Digital-output humidity and temperature sensor

  HM2301 Digital-output humidity and temperature sensor                          Data sheet HM2301 Digital-output humidity and temperature sensor Feature & Application: - Full range temperature compensated - Relative humidity and temperature measurement - Calibrated digital s
Hanwei
Hanwei
sensor
2HM2301AP-Channel Enhancement Mode Power MOSFET

HM2301A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS =
H&M Semiconductor
H&M Semiconductor
mosfet
3HM2301BP-Channel Trench Power MOSFET

P-Channel Trench Power MOSFET General Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application. HM2301B Features
H&M Semiconductor
H&M Semiconductor
mosfet


HM2 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1HM2007Speech recognition

HMC
HMC
data
2HM200WD1-100TFT LCD

Global LCD Panel Exchange Center www.panelook.com SPEC. NUMBER S8-64-6A-072 PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HF AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE HF AND MUST BE RETURNED TO BOE HF UPON ITS REQUEST PRODUCT GROUP ISSUE DATE TFT-
BOE
BOE
data
3HM20N60Asilicon N-channel Enhanced VDMOSFET

HM20N60A General Description: HM20N60A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for sy
H&M Semiconductor
H&M Semiconductor
mosfet
4HM215WU1-300TFT LCD

Global LCD Panel Exchange Center www.panelook.com SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HF AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE HF AND MUST BE RETURNED TO BOE HF UPON ITS REQUEST PRODUCT GROUP TFT-LCD Rev. A ISSUE DATE 2
BOE
BOE
data
5HM215WU1-500TFT LCD

SPEC. NUMBER S864-6018 PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HF AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE HF AND MUST BE RETURNED TO BOE HF UPON ITS REQUEST PRODUCT GROUP TFT MODULE Rev. O ISSUE DATE 2011.6.9 PAGE 1 OF 30 TITLE : B3 HM215
BOE
BOE
data
6HM215WU3-100TFT LCD

Global LCD Panel Exchange Center www.panelook.com PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HF AND SHALL NOT BEG REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE HF AND MUST BE RETURNED TO BOE HF UPON ITS REQUEST TITLE : B3 HM215WU3-100 Open Cell Preliminary Product Spe
BOE
BOE
data
7HM215WU3-500TFT LCD

Global LCD Panel Exchange Center www.panelook.com SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HF AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE HF AND MUST BE RETURNED TO BOE HF UPON ITS REQUEST PRODUCT GROUP TFT-LCD Rev. 0 ISSUE DATE 2
BOE
BOE
data



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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