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HM12N60F データシート PDF

この部品の機能は「600v N-channel Mosfet」です。


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部品番号
HM12N60F

600V N-Channel MOSFET


HM12N60 / HM12N60F 600V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailo


H&M Semiconductor
H&M Semiconductor

データシート pdf



文字列「 HM12N60 」「 12N60F 」で始まる検索結果です。

部品説明

HM12N60

600V N-Channel MOSFET

HM12N60 / HM12N60F 600V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and

H&M Semiconductor
H&M Semiconductor

 データシート pdf


1260PT

Phase Control Thyristors

SEMICONDUCTOR RRooHHSS SEMICONDUCTOR 1260PT Series RRooHHSS www.nellsemi.com Page 2 of 2

nELL
nELL

 データシート pdf


12N60F

N-CHANNEL MOSFET

12N60(F,B,H) 12A mps,600 Volts N-CHANNEL MOSFET FEATURE  12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 12N60 ITO-220AB 12N60F TO-263 12N60B TO-262 12N60H Absolute M

CHONGQING PINGYANG
CHONGQING PINGYANG

 データシート pdf


2SB1260

Power Transistor

2SB1260 / 2SB1181 PNP -1.0A -80V Middle Power Transistor Parameter VCEO IC Value -80V -1.0A lOutline MPT3 Base Collector Emitter lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD1733 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -500mA/ -

ROHM Semiconductor
ROHM Semiconductor

 データシート pdf


2SB1260

PNP Plastic-Encapsulate Transistor

2SB1260 PNP Plastic-Encapsulate Transistor SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 C) ABSOLUTE MAXIMUM RATINGS (Ta=25% Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC I CP Collector Power Dissipation

Weitron Technology
Weitron Technology

 データシート pdf


2SB1260

POWER TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2SB1260 POWER TRANSISTOR PNP SILICON TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity. *Low VCE(SAT)

Unisonic Technologies
Unisonic Technologies

 データシート pdf

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