HLB121J データシート PDFこの部品の機能は「NPN Triple Diffused Planar Type High Voltage Transistor」です。 |
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部品番号 |
HLB121J NPN Triple Diffused Planar Type High Voltage Transistor Hi-Sincerity Mocroelectronics |
文字列「 HLB121 」「 121J 」で始まる検索結果です。 |
部品説明 |
HLB121 NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR UTC HLB121 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB121 is a medium power transistor designed for use in switching applications. FEATURES * High breakdown voltage * Low collector saturation voltage * Fast s Unisonic Technologies |
HLB1211 NPN Triple Diffused Planar Type High Voltage Transistors Hi-Sincerity Mocroelectronics |
0402DF-121XJR Chip Inductors Document 1069-1 Chip Inductors – 0402DF (1005) • Higher inductance values than other 0402 inductors • Ferrite construction for high current handling • 25 inductance values from 20 nH to 3.3 µH • Ideal for use in both mobile and infrastructure equipment • Equall Coilcraft |
05D121K Varistor Varistor Specification TYEE Varistor Varistor are voltage dependent, nonlinear device which have an electrical behavior similar to back-to-back zener diodes. TYEE series zinc oxide varistor are nonlinear resistors, consisting main of zinc oxide and several kinds of metal oxide ad TYEE |
07D121K Varistor Varistor Specification TYEE Varistor Varistor are voltage dependent, nonlinear device which have an electrical behavior similar to back-to-back zener diodes. TYEE series zinc oxide varistor are nonlinear resistors, consisting main of zinc oxide and several kinds of metal oxide ad TYEE |
0805CS-121E WIRE-WOUND CHIP INDUCTOR 1. Part Description 1.1 Part Numbering (Example) ( Ex. ) 0805 C S - 120 E J T S SIZE. 0402 1.0 * 0.5 mm 0603 1.6 * 0.8 mm 0805 2.0 * 1.2 mm 1008 2.5 * 2.0 mm 1206 3.2 * 1.6 mm 1210 3.2 * 2.5 mm SHAPE. C : C SHAPE H : H SHAPE M : MOLDING PROFILE. S: STANDARD T: LOW PROFILE Q:H DELTA |
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