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Datasheet HGTG30N60B3 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | HGTG30N60B3 | 60A/ 600V/ UFS Series N-Channel IGBT HGTG30N60B3
Data Sheet August 2003
60A, 600V, UFS Series N-Channel IGBT
The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar |
Fairchild Semiconductor |
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3 | HGTG30N60B3 | 60A/ 600V/ UFS Series N-Channel IGBT HGTG30N60B3
Data Sheet January 2000 File Number 4444.2
60A, 600V, UFS Series N-Channel IGBT
The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conducti |
Intersil Corporation |
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2 | HGTG30N60B3D | 60A/ 600V/ UFS Series N-Channel IGBT HGTG30N60B3D, HGT4E30N60B3DS
Data Sheet December 2001
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D, and HGT4E30N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high |
Fairchild Semiconductor |
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1 | HGTG30N60B3D | 60A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG30N60B3D
Data Sheet January 2000 File Number 4446.2
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a |
Intersil Corporation |
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Número de pieza | Descripción | Fabricantes | |
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