HGTG20N120CND データシート PDFこの部品の機能は「63a/ 1200v/ Npt Series N-channel Igbt With Anti-parallel Hyperfast Diode」です。 |
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部品番号 |
HGTG20N120CND 63A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG20N120CND Data Sheet January 2000 File Number 4535.2 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a Intersil Corporation |
文字列「 HGTG20N120 」「 20N120CND 」で始まる検索結果です。 |
部品説明 |
HGTG20N120 34A/ 1200V N-Channel IGBT Semiconductor HGTG20N120E2 34A, 1200V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) April 1995 Features • 34A, 1200V • Latch Free Operation • Typical Fall Time - 780ns • High Input Impedance • Low Conduction Loss Desc Intersil Corporation |
HGTG20N120C3D 45A/ 1200V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG20N120C3D Data Sheet October 1998 File Number 4508.1 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the hi Intersil Corporation |
HGTG20N120CN 63A/ 1200V/ NPT Series N-Channel IGBT HGTG20N120CN Data Sheet January 2000 File Number 4533.2 63A, 1200V, NPT Series N-Channel IGBT The HGTG20N120CN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipol Intersil Corporation |
HGTG20N120E2 34A/ 1200V N-Channel IGBT Semiconductor HGTG20N120E2 34A, 1200V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) April 1995 Features • 34A, 1200V • Latch Free Operation • Typical Fall Time - 780ns • High Input Impedance • Low Conduction Loss Desc Intersil Corporation |
C2D20120 Silicon Carbide Schottky Diode C2D20120–Silicon Carbide Schottky Diode Zero Recovery® Rectifier Features • • • • • • • VRRM = 1200 V IF = 20 A Qc =122 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Tempe CREE |
C2D20120D Silicon Carbide Schottky Diode C2D20120D Silicon Carbide Schottky Diode VRRM = 1200 V Zero R Features ecovery® Rectifier Package IF (TC=135˚C) = 29 A** Qc = 122 nC** • • • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Op Cree |
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