HGTG10N120BN データシート PDFこの部品の機能は「35a/ 1200v/ Npt Series N-channel Igbt」です。 |
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部品番号 |
HGTG10N120BN 35A/ 1200V/ NPT Series N-Channel IGBT HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. The Fairchild Semiconductor |
HGTG10N120BN 35A/ 1200V/ NPT Series N-Channel IGBT HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet January 2000 File Number 4575.2 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NP Intersil Corporation |
文字列「 HGTG10N120 」「 10N120BN 」で始まる検索結果です。 |
部品説明 |
HGTG10N120BND 35A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features o Fairchild Semiconductor |
HGTG10N120BND 35A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG10N120BND Data Sheet January 2000 File Number 4579.3 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine t Intersil Corporation |
10N120BND HGTG10N120BND Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features Fairchild Semiconductor |
828310120000x (8283 Series) Plug Straight w w w .D at aS he et 4U .c om Kyocera |
AA0410120KLx-xxx AXIAL INDUCTOR www.DataSheet4U.net SPECIFICATION FOR APPROVAL REF : 20080714-B PROD. NAME ABC'S DWG NO. AA0410□□□□L□-□□□ PAGE: 1 AXIAL INDUCTOR ABC'S ITEM NO. Ⅰ﹒CONFIGURATION & DIMENSIONS: A : B : C : D : ψ: W 4.0 max. 10.5 max. 61.0 ref. 25.4 min. 0.65 m/m m/m m/m m/m ABC Taiwan Electronics |
C2D10120 Silicon Carbide Schottky Diode C2D10120–Silicon Carbide Schottky Diode Zero Recovery® Rectifier Features • • • • • • • VRRM = 1200 V IF = 10 A Qc = 61 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Tempe CREE |
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