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Datasheet HGTD8P50G1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | HGTD8P50G1 | 8A/ 500V P-Channel IGBTs HGTD8P50G1, HGTD8P50G1S
March 1997
8A, 500V P-Channel IGBTs
Package
JEDEC TO-251AA
EMITTER COLLECTOR GATE
Features
• 8A, 500V • 3.7V VCE(SAT) • Typical Fall Time - 1800ns • High Input Impedance • TJ = +150oC
(FLANGE) COLLECTOR
Description
The HGTD8P50G1 and the HGTD8P50G1S are P-channe |
 Intersil Corporation |
 |
| 1 | HGTD8P50G1S | 8A/ 500V P-Channel IGBTs HGTD8P50G1, HGTD8P50G1S
March 1997
8A, 500V P-Channel IGBTs
Package
JEDEC TO-251AA
EMITTER COLLECTOR GATE
Features
• 8A, 500V • 3.7V VCE(SAT) • Typical Fall Time - 1800ns • High Input Impedance • TJ = +150oC
(FLANGE) COLLECTOR
Description
The HGTD8P50G1 and the HGTD8P50G1S are P-channe |
Intersil Corporation |
|
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