HGTD1N120CNS データシート PDFこの部品の機能は「6.2a/ 1200v/ Npt Series N-channel Igbt」です。 |
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部品番号 |
HGTD1N120CNS 6.2A/ 1200V/ NPT Series N-Channel IGBT HGTD1N120CNS, HGTP1N120CN Data Sheet January 2000 File Number 4652.2 6.2A, 1200V, NPT Series N-Channel IGBT The HGTD1N120CNS, and the HGTP1N120CN are Non-Punch Through (NPT) IGBT designs. They are ne Intersil Corporation |
文字列「 HGTD1N120 」「 1N120CNS 」で始まる検索結果です。 |
部品説明 |
HGTD1N120BNS 5.3A/ 1200V/ NPT Series N-Channel IGBT HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFET Fairchild Semiconductor |
HGTD1N120BNS 5.3A/ 1200V/ NPT Series N-Channel IGBT HGTD1N120BNS, HGTP1N120BN Data Sheet January 2000 File Number 4649.2 5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best Intersil Corporation |
1120 High Speed Pin Driver Telcom |
1120-xxx 1 Watt 1100 Series DC-DC Regulated Converters Tecnetics |
1120-xxxx High Current RF Chokes High Current RF Chokes Special Features • Very high current capacity • Low DCR • Epoxy coated ferrite bobbin core • VW-1 rated shrink tubing to cover winding • Self-leaded • Fixed lead spacing • Center hole for mechanical mounting • Dielectric withstanding voltage JW Miller |
1N1120A Silicon Standard Recovery Diode Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1199A thru 1N1206AR VRRM = 50 V - 600 V IF = 12 A DO GeneSiC |
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