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Datasheet HGT1S20N36G3VL Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | HGT1S20N36G3VL | Voltage Clamping IGBTs March 2004
HGTP20N36G3VL,HGT1S20N36G3VLS, HGT1S20N36G3VL
20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
Features
• Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175oC • Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logi |
 Fairchild Semiconductor |
 |
| 1 | HGT1S20N36G3VLS | Voltage Clamping IGBTs March 2004
HGTP20N36G3VL,HGT1S20N36G3VLS, HGT1S20N36G3VL
20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
Features
• Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175oC • Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logi |
Fairchild Semiconductor |
|
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