HFU2N60 データシート PDFこの部品の機能は「N-channel Mosfet」です。 |
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部品番号 |
HFU2N60 N-Channel MOSFET HFD2N60_HFU2N60 July 2005 HFD2N60 / HFU2N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1.8 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust SemiHow |
文字列「 HFU2N60 」「 2N60 」で始まる検索結果です。 |
部品説明 |
HFU2N60S 600V N-Channel MOSFET HFD2N60S_HFU2N60S March 2014 HFD2N60S / HFU2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1.9 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Swit SemiHow |
HFU2N60U N-Channel MOSFET HFD2N60U_HFU2N60U HFD2N60U / HFU2N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Ty SemiHow |
02N60P SSM02N60P SSM02N60P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive-avalanche rated Fast-switching Simple drive requirement G D BV DSS RDS(ON) ID TO-220 600V 8Ω 2A Description S The TO-220 package is widely preferred for commercial and industrial applications. ETC |
02N60S5 SPN02N60S5 SPN02N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra VDS RDS(on) ID 600 3 0.4 SOT-223 4 V Ω A low effective capacitances • Improved transconductance 2 Infineon Technologies |
12-PMB-260-DC-E Power Line Filters Power Line Filters DC - Higher Current 12-PMF & 12 PMB DC Series Features I Space-saving, compact designs I Suitable for products that must conform to FCC regulations I Excellent attenuation for high voltage impulse I Metal case provides effective shielding I Excellent filterin api |
1260PT Phase Control Thyristors SEMICONDUCTOR RRooHHSS SEMICONDUCTOR 1260PT Series RRooHHSS www.nellsemi.com Page 2 of 2 nELL |
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