HFS10N80 データシート PDFこの部品の機能は「N-channel Mosfet」です。 |
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部品番号 |
HFS10N80 N-Channel MOSFET HFS10N80 Dec 2010 HFS10N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 0.92 ȍ ID = 9.4 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Tech SemiHow |
文字列「 HFS10N80 」「 10N80 」で始まる検索結果です。 |
部品説明 |
10N80 N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 10N80 ·FEATURES ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max) ·Avalanche Energy Specified ·Fast Switchin Inchange Semiconductor |
10N80 N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 10N80 800V N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitab Unisonic Technologies |
10N80 N-Channel Power MOSFET / Transistor SEMICONDUCTOR 10N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 10A, 800Volts DESCRIPTION The Nell 10N80 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of nELL |
2SA1080 Silicon PNP Power Transistor INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1080 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) ·Good Linearity of hFE ·Complement to Type 2SC2530 APPLICATIONS ·Designed for medium power amplifier applicati Inchange Semiconductor |
2SA1080 Trans GP BJT PNP 90V 0.1A 3-Pin TO-92 New Jersey Semiconductor |
2SC1080 (2SC1079 / 2SC1080) SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION ·With TO-3 package ·Complement to type 2SA679/680 ·High power dissipation APPLICATIONS ·For audio power amplifier applications PINNING(see Fig.2) PIN SavantIC |
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