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Datasheet HFP640 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | HFP640 | 200V N-Channel MOSFET HFP640
July 2005
HFP640
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ = 0.145ȍ ID = 18 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Char |
SemiHow |
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3 | HFP640 | N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co.,Ltd.
HFP640
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&D |
Shantou Huashan |
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2 | HFP640A | N-Channel MOSFET HFP640A_HFS640A
Oct 2016
HFP640A / HFS640A
200V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant
Key Parameters
Parameter BVDSS ID
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SemiHow |
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1 | HFP640G | N-Channel MOSFET HFP640G
Feb 2015
HFP640G
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ ȍ ID = 18 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Char |
SemiHow |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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