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Datasheet HFP634 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 HFP634   250V N-Channel MOSFET

HFP634 July 2005 HFP634 250V N-Channel MOSFET BVDSS = 250 V RDS(on) typ ȍ ID = 8.1 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Cha
SemiHow
SemiHow
datasheet HFP634 pdf

HFP Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
HFP50N06

60V N-Channel MOSFET

HFP50N06 July 2005 BVDSS = 60 V HFP50N06 60V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled
SemiHow
SemiHow
datasheet pdf - SemiHow
HFP640

200V N-Channel MOSFET

HFP640 July 2005 HFP640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.145ȍ ID = 18 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰
SemiHow
SemiHow
datasheet pdf - SemiHow
HFP730

N-Channel Enhancement Mode Field Effect Transistor

Shantou Huashan Electronic Devices Co.,Ltd. HFP730 N-Channel Enhancement Mode Field Effect Transistor █ General Description these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters,
Shantou Huashan Electronic
Shantou Huashan Electronic
datasheet pdf - Shantou Huashan Electronic


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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