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Datasheet HFP13N50S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HFP13N50S | N-Channel MOSFET HFP13N50S
March 2014
HFP13N50S
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ ȍ ID = 13 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Ga |  SemiHow | mosfet |
HFP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HFP10N60 | N-Channel MOSFET HFP10N60
HFP10N60
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lo SemiHow mosfet | | |
| 2 | HFP10N60S | N-Channel MOSFET HFP10N60S
Nov 2007
HFP10N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 0.67 Ω ID = 9.5 A
FEATURES
q Originative New Design q Superior Avalanche Rugged Technology q Robust Gate Oxide Technology q Very Low Intrinsic Capacitances q Excellent Switching Characteristics q Unrivalled Gate Char SemiHow mosfet | | |
| 3 | HFP10N60U | N-Channel MOSFET HFP10N60U
HFP10N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area SemiHow mosfet | | |
| 4 | HFP10N65S | N-Channel MOSFET HFP10N65S
March 2014
HFP10N65S
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ ȍ ID = 9.5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Ga SemiHow mosfet | | |
| 5 | HFP10N65U | N-Channel MOSFET HFP10N65U
HFP10N65U
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area SemiHow mosfet | | |
| 6 | HFP10N80 | N-Channel MOSFET HFP10N80
Dec 2010
HFP10N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ ȍ ID = 9.4 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate SemiHow mosfet | | |
| 7 | HFP11N40 | N-Channel MOSFET HFP11N40
HFP11N40
400V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lo SemiHow mosfet | |
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