Datasheet HFH9N90 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
2	HFH9N90	N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co.,Ltd. HFH9N90 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially t	HUASHAN ELECTRONIC
1	HFH9N90	N-Channel MOSFET HFH9N90 Apr 2009 HFH9N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ = 1.12 Ω ID = 9.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled G	SemiHow

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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