Datasheet HFD2N70S Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HFD2N70S	N-Channel MOSFET HFD2N70S_HFU2N70S Dec 2009 HFD2N70S / HFU2N70S 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 5.0 ȍ ID = 1.5 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics	SemiHow

HFD2N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HFD2N70S	N-Channel MOSFET HFD2N70S_HFU2N70S Dec 2009 HFD2N70S / HFU2N70S 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 5.0 ȍ ID = 1.5 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switch	SemiHow
HFD2N65S	N-Channel MOSFET HFD2N65S_HFU2N65S Mar 2010 HFD2N65S / HFU2N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 5.0 ȍ ID = 1.6 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switch	SemiHow
HFD2N60U	N-Channel MOSFET HFD2N60U_HFU2N60U HFD2N60U / HFU2N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Ty	SemiHow

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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