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Datasheet HF7FD Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HF7FD | Subminiature High Power Relay /- { -+
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HF7 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HF70ACB | (HFx0ACB Series) EMC Components / Ferrite Beads / SMD 9415_HF_ACB (1/2)
EMC Components
Ferrite Beads SMD
FEATURES • This extensive series completely covers impedance values ranging from 7 to 125Ω[100MHz] and can be applied to a wide range of circuits. • The 2012, 3216, 3225 and 4532 types all use HF70, 50 and 30 materials. The most suitable comp  TDK emc | | |
| 2 | HF70D120ACE | Haxfred Die in Wafer Form HF70D120ACE
Features
GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation
PD - 93878
Hexfred Die in Wafer Form
1200V I  International data | | |
| 3 | HF735 | In line high pressure filters In line high pressure filters
HF 735 series
THE IMPORTANCE OF AN EFFICIENT FILTRATION
The main cause of anomalies in hydraulic systems has to be attributed to the presence of contaminants in the fluid. The nature of the contaminant may be: gaseous, name  IKRON filter | | |
| 4 | HF75-12 | NPN SILICON RF POWER TRANSISTOR HF75-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The HF75-12 is Designed for 12.5 Volt Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band.
FEATURES INCLUDE:
• Replacement for MRF454 & SD1405 • PG = 18 dB Typical @ 30MHz & 75W • Withstands 20:1 Load VSWR
PACKAGE STYLE .  Advanced Semiconductor transistor | | |
| 5 | HF75-28F | NPN SILICON RF POWER TRANSISTOR HF75-28F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF75-28F is Designed for
B .112 x 45° A
PACKAGE STYLE .380 4L FLG
FEATURES:
• PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W (PEP) • Omnigold™ Metalization System
E B
C D F E
C E
Ø.125 NOM. FULL R J .125
G
Advanced Semiconductor transistor | | |
| 6 | HF75-28S | NPN SILICON RF POWER TRANSISTOR HF75-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF75-28S is Designed for
PACKAGE STYLE .380 STUD
.112x45° A
B
C E
ØC
FEATURES:
• PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W (PEP) • Omnigold™ Metalization System
E B
H I J
D
#8-32 UNC-2A
G F E
MAXIMUM Advanced Semiconductor transistor | | |
| 7 | HF75-50F | NPN SILICON RF POWER TRANSISTOR HF75-50F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF75-50F is Designed for
PACKAGE STYLE .380 4L FLG
B .112 x 45° A
FEATURES:
• PG = 14 dB min. at 75 W/30 MHz • IMD3 = 50 dBc max. at 75 W (PEP) • Omnigold™ Metalization System
F
E B
C D E
C E
Ø.125 NOM. FULL R J .125
MAX Advanced Semiconductor transistor | |
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