Datasheet HF50-12F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HF50-12F	NPN SILICON RF POWER TRANSISTOR HF50-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF50-12F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: • PG = 16 dB min. at 50 W/30 MHz • IMD3 = -30 dBc max. at 30 W (PEP) • Omnigold™ Metalization System F E B C D E C E Ø.125 NOM. FULL R J .125 MAX	Advanced Semiconductor

HF50- Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HF50-12	NPN SILICON RF POWER TRANSISTOR HF50-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF50-12 is Designed for 12.5 Volt Class AB and Class C Power Amplifier Applications Operating in the 2 to 32 MHz HF Band. FEATURES INCLUDE: • High Gain, 16 dB Typical @ 30 MHz • Emitter Ballasting • Withstands Sever	Advanced Semiconductor
HF50-12F	NPN SILICON RF POWER TRANSISTOR HF50-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF50-12F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: • PG = 16 dB min. at 50 W/30 MHz • IMD3 = -30 dBc max. at 30 W (PEP) • Omnigold™ Metalization System F E B C D E C E Ø.125 NOM	Advanced Semiconductor
HF50-12S	NPN SILICON RF POWER TRANSISTOR HF50-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF50-12S is Designed for PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: B • PG = 16 dB min. at 50 W/30 MHz • IMD3 = -30 dBc max. at 50 W (PEP) • Omnigold™ Metalization System D C E ØC E B H I J MAXIMU	Advanced Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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