HE80170M データシート PDFこの部品の機能は「He80170m」です。 |
検索結果を表示する |
部品番号 |
HE80170M HE80170M www.Datasheet.jp Suites 2202-7, Tower 6, The Gateway, 9 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: (852) 2123 3289 Fax: (852) 2123 3393 E-mail: [email protected] Home Page: www.jesstech.com Jess Technology |
文字列「 HE80170 」「 80170M 」で始まる検索結果です。 |
部品説明 |
HE80170L HE80170L Suites 2202-7, Tower 6, The Gateway, 9 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: (852) 2123 3289 Fax: (852) 2123 3393 E-mail: [email protected] Home Page: www.jesstech.com HE80170L HE80000 SERIES A. HE80170L Introduction HE80170L is a member of Jess Jess Technology |
HE80170S HE80170S Suites 2202-7, Tower 6, The Gateway, 9 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: (852) 2123 3289 Fax: (852) 2123 3393 E-mail: [email protected] Home Page: www.jesstech.com HE80170S HE80000 SERIES A. HE80170S Introduction HE80170S is a member of Jess Jess Technology |
STPS80170C High Voltage Power Schottky Rectifier ® STPS80170C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM Tj VF(max) FEATURES AND BENEFITS ■ ■ ■ ■ ■ ■ 2 x 40 A 170 V 175 °C 0.74 V A1 K A2 High junction temperature capability Low leakage current ST Microelectronics |
TFTMD80170CBA TFT Module Hitachi |
V80170PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com V80170PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 10 A TMBS® FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Vishay |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |