HD8205 データシート PDFこの部品の機能は「Dual N-channel Enhancement Mode Mosfet」です。 |
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部品番号 |
HD8205 Dual N-Channel Enhancement Mode MOSFET ÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿ ÿÿ HI-DEVICE |
文字列「 HD8205 」「 8205 」で始まる検索結果です。 |
部品説明 |
HD8205-LOW N-Channel Enhancement Mode Power MOSFET HD8205-LOW N-Channel Enhancement Mode Power MOSFET Description The 8205-LOW uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switchi HI-DEVICE |
HD8205A N-Channel Enhancement Mode Power MOSFET HD8205A N-Channel Enhancement Mode Power MOSFET Description The HD8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching a HI-DEVICE |
8205 LOW-DROPOUT REGULATORS . HIGH EFFICIENCY 8205 PRELIMINARY INFORMATION (subject to change without notice) December 6, 1999 NC OR ADJ* OUT LOW-DROPOUT REGULATORS — HIGH EFFICIENCY Designed specifically to meet the requirement for extended operation of battery-powered equipment such as cordless and cellular telephones, Allegro MicroSystems |
8205A Dual N-Channel MOSFET 8205A Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch RZC Microelectronics |
8205A Dual N-Channel Enhancement-Mode MOSFET HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200701 Issued Date : 2007.03.01 Revised Date : 2007.03.12 Page No. : 1/4 8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 8-Lead Plastic TSSOP-8L 8205A Symbol & Pin Assignment Description This N-Channel 2.5V specified MO HSMC |
8205A N-channel enhancement mode power MOSFET N 沟道增强型功率 MOSFET 8205A/8205B/8205C 1. 描述 共漏极N沟道增强型功率场效应管8205A/8205B/ 8205C 具有快速开关、超低导通电阻和高性价比的特点。 8205A/8205B/8205C 适用于设计电池保护或低压开关的电路。 引脚排列 2. ETC |
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