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Datasheet HCTS20MS Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | HCTS20MS | Radiation Hardened Dual 4-Input NAND Gate TM HCTS20MS
September 1995
Radiation Hardened Dual 4-Input NAND Gate
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day
(Typ) • Dose Rate Survivability: > |
Intersil |
HCTS2 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
HCTS244D | Radiation Hardened Octal Buffer/Line Driver/ Three-State |
Intersil Corporation |
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HCTS299D | Radiation Hardened 8-Bit Universal Shift Register; Three-State |
Intersil Corporation |
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HCTS27DMSR | Radiation Hardened Triple 3-Input NOR Gate |
Intersil Corporation |
Esta página es del resultado de búsqueda del HCTS20MS. Si pulsa el resultado de búsqueda de HCTS20MS se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
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