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H02N60SJ データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
1 H02N60SJ

N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This hi

HI-SINCERITY
HI-SINCERITY
H02N60SJ データシート pdf




H02N6 データシート - 検索結果

部品番号 部品説明 メーカ PDF
H02N60SJ

N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltag

HI-SINCERITY
HI-SINCERITY
H02N60SJ データシート pdf
H02N60SF

N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltag

HI-SINCERITY
HI-SINCERITY
H02N60SJ データシート pdf
H02N60SE

N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltag

HI-SINCERITY
HI-SINCERITY
H02N60SJ データシート pdf
H02N60S

N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltag

HI-SINCERITY
HI-SINCERITY
H02N60SJ データシート pdf


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