GW39NC60VD データシート PDFこの部品の機能は「 Stgw39nc60vd」です。 |
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部品番号 |
GW39NC60VD STGW39NC60VD www.Datasheet.jp STGW39NC60VD 40 A - 600 V - very fast IGBT Features ■ ■ Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode 2 1 3 ST Microelectronics |
文字列「 GW39NC60 」「 39NC60VD 」で始まる検索結果です。 |
部品説明 |
1SCA022186R3960 neutral and earth terminals
ABB |
2C3960 Chip Type 2C3960 Geometry 0003 Polarity NPN Data Sheet No. 2C3960 Chip Type 2C3960 Geometry 0003 Polarity NPN Generic Packaged Part: 2N3960 Chip type 2C3960 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for high-speed current-mode logic s Semicoa |
2N3960 Type 2N3960 Geometry 0003 Polarity NPN Data Sheet No. 2N3960 Type 2N3960 Geometry 0003 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • General-purpose low-power NPN silicon transistor. Housed in TO-18 case. Also available in chip form using the 0003 chip geometry. The Min and Max limits shown are per Semicoa Semiconductor |
2N3960 HIGH FREQUENCY TRANSISTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation (§ TA = 25°C Derate above 25°C Total Device Dissipation <& Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vCEO vCBO vEB Motorola Semiconductors |
2N3960 NPN SILICON SWITCHING TRANSISTOR TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/399 DEVICES 2N3960 2N3960UB LEVELS JAN JANTX JANTXV ABSOLUTE MAXIMUM R Microsemi |
2N3960 Trans GP BJT NPN 12V 0.05A 3-Pin TO-18 New Jersey Semiconductor |
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