|
|
Datasheet GU85L02 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GU85L02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/12/06 REVISED DATE :
GU85L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 6m 85A
The GU85L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec |  GTM | mosfet |
GU8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GU80N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/06/24 REVISED DATE :
GU80N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 8m 80A
The GU80N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec GTM mosfet | | |
| 2 | GU85L02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/12/06 REVISED DATE :
GU85L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 6m 85A
The GU85L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec GTM mosfet | | |
| 3 | GU85T03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/24 REVISED DATE :
GU85T 03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 6m 75A
The GU85T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe GTM mosfet | | |
| 4 | GU85T08 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/03/08 REVISED DATE :
GU85T 08
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
80V 13m 75A
The GU85T08 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-eff GTM mosfet | | |
| 5 | GU88L02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/01/05 REVISED DATE :
GU88L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 5m 88A
The GU88L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec GTM mosfet | | |
| 6 | GU88LS02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/01/05 REVISED DATE :
GU88LS02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 5m 75A
Description
The GU88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance GTM mosfet | |
| Esta página es del resultado de búsqueda del GU85L02. Si pulsa el resultado de búsqueda de GU85L02 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |