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Datasheet GT60N321 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT60N321 | High Power Switching Applications The 4th Generation GT60N321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321
High Power Switching Applications The 4th Generation
Unit: mm
· · · ·
FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A) FRD : trr = 0.8 µs (typ.) (d |
Toshiba Semiconductor |
GT60N Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT60N321 | High Power Switching Applications The 4th Generation |
Toshiba Semiconductor |
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GT60N322 | Silicon N Channel IGBT Voltage Resonance Inverter Switching Application |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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