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Datasheet GT60J323H Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT60J323H | Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J323H
Current Resonance Inverter Switching Application Induction Heating Cooking Appliances Induction Heating Appliances
• • • • • • Enhancement mode type High speed : tf = 0.12 μs (typ.) (IC = 60A) Low satu |
Toshiba |
GT60J3 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT60J323 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
Toshiba Semiconductor |
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GT60J323H | Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
Toshiba |
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GT60J322 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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