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Datasheet GT60J323 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | GT60J323 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J323
Current Resonance Inverter Switching Application
• • • • • • Enhancement mode type High speed : tf = 0.16 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A) FRD included bet |
Toshiba Semiconductor |
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1 | GT60J323H | Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J323H
Current Resonance Inverter Switching Application Induction Heating Cooking Appliances Induction Heating Appliances
• • • • • • Enhancement mode type High speed : tf = 0.12 μs (typ.) (IC = 60A) Low satu |
Toshiba |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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