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Datasheet GT60J322 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT60J322 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J322
The 4th Generation Soft Switching Applications
Unit: mm
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Enhancement-mode Low saturation voltage: VCE (sat) = 1.25 V (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage |
Toshiba Semiconductor |
GT60J Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT60J323 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
Toshiba Semiconductor |
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GT60J323H | Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
Toshiba |
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GT60J322 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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