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Datasheet GT40Q323 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT40Q323 | Silicon N Channel IGBT / Voltage Resonance Inverter Switching Application GT40Q323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40Q323
Voltage Resonance Inverter Switching Application
Unit: mm
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Enhancement-mode High speed: tf = 0.14 μs (typ.) (IC = 40A) FRD included between emitter and collector 4th generat |
Toshiba Semiconductor |
GT40Q Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT40Q322 | Voltage Resonance Inverter Switching Application |
Toshiba Semiconductor |
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GT40QR21 | Silicon N-Channel IGBT |
Toshiba |
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GT40Q321 | Voltage Resonance Inverter Switching Application |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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