GT10Q301 データシート PDFこの部品の機能は「Insulated Gate Bipolar Transistor」です。 |
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部品番号 |
GT10Q301 Insulated Gate Bipolar Transistor GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications Unit: mm · · · · · The 3rd generation Enhancemen Toshiba Semiconductor |
文字列「 GT10Q301 」「 10Q301 」で始まる検索結果です。 |
部品説明 |
GKI10301 N Channel Trench Power MOSFET 100 V, 26 A, 20.2 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI10301 Features V(BR)DSS --------------------------------100 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) -------- 29.8 mΩ max. (VGS = 10 V, ID = 14.2 A) SANKEN |
PTF210301 LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features Infineon Technologies AG |
PTF210301A LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features Infineon Technologies AG |
PTF210301E LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features Infineon Technologies AG |
PTFA210301E Thermally-Enhanced High Power RF LDMOS FET PTFA210301E Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110 – 2170 MHz Description The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is optimized for single- and two-carrier WCDMA operation from 2110 to Infineon |
TVR10301 (TVR Series) Zinc Oxide Varistor TVR-SERIES Part Number Code TVR-SERIES Part Number Code 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 TVR Product Code Thinking Varistor Resistance Disc 05 07 10 14 20 25 32 40 60 34 Ø Size 5Ø 7Ø 10Ø 14Ø 20Ø 25Ø 32Ø 40Ø 60Ø 34x34 Part No. (VlmA) 180 18x100V 241 24x101V 1 TKS |
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