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GT10Q301 データシート PDF

この部品の機能は「Insulated Gate Bipolar Transistor」です。


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部品番号
GT10Q301

Insulated Gate Bipolar Transistor


GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications Unit: mm · · · · · The 3rd generation Enhancemen


Toshiba Semiconductor
Toshiba Semiconductor

データシート pdf



文字列「 GT10Q301 」「 10Q301 」で始まる検索結果です。

部品説明

GKI10301

N Channel Trench Power MOSFET

100 V, 26 A, 20.2 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI10301 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ---------------------------------------------------------- 26 A  RDS(ON) -------- 29.8 mΩ max. (VGS = 10 V, ID = 14.2 A) 

SANKEN
SANKEN

 データシート pdf


PTF210301

LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz

PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features

Infineon Technologies AG
Infineon Technologies AG

 データシート pdf


PTF210301A

LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz

PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features

Infineon Technologies AG
Infineon Technologies AG

 データシート pdf


PTF210301E

LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz

PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features

Infineon Technologies AG
Infineon Technologies AG

 データシート pdf


PTFA210301E

Thermally-Enhanced High Power RF LDMOS FET

PTFA210301E Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110 – 2170 MHz Description The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is optimized for single- and two-carrier WCDMA operation from 2110 to

Infineon
Infineon

 データシート pdf


TVR10301

(TVR Series) Zinc Oxide Varistor

TVR-SERIES Part Number Code TVR-SERIES Part Number Code 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 TVR Product Code Thinking Varistor Resistance Disc 05 07 10 14 20 25 32 40 60 34 Ø Size 5Ø 7Ø 10Ø 14Ø 20Ø 25Ø 32Ø 40Ø 60Ø 34x34 Part No. (VlmA) 180 18x100V 241 24x101V 1

TKS
TKS

 データシート pdf

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