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Datasheet GSC8107E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GSC8107E | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/11/02 REVISED DATE :
GSC8107E
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 7.0m -13A
The GSC8107E provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost |  GTM | mosfet |
GSC Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GSC-2401-R | 100/1000BASE- Tx Transformer Description: 100/1000BASE- Tx Transformer
Electrical Characteristics: @25℃
OCL:350uH Min @ 100KHz,200mV,with 8mA DC BIAS
LL:0.5uH Max @100KHz,200mV
Cw/w:25PF TYP @100KHz,200mV DCR:1.4Ω Max
Turn Ratio:1CT:1CT(TX)/1CT:1CT(RX)±5%
Insertion Loss : 1-100MHz
- 1.0dB Max
Return Loss : 1-30  U-TRON transformer | | |
| 2 | GSC103 | DUAL OP-AMP
Pb Free Plating Product
ISSUED DATE :2005/10/26 REVISED DATE :
GSC103
Description
D u a l O P - AM P an d 2 . 5V ±0. 7 % Vo l ta g e R ef e r en c e
The GSC103 consists of 2 low-offset voltage amplifiers and a high-accuracy 2.5V voltage reference in SOP-8 package. The GSC103 GTM data | | |
| 3 | GSC103A | DUAL OPERATIONAL AMP AND VOLTAGE REFERENCE
Pb Free Plating Product
ISSUED DATE :2005/12/22 REVISED DATE :
GSC103A
Description
D u a l O p e r a t i o n a l A m p l i f i e r a n d Vo l t a g e R e f e r e n c e
The GSC103A is a monolithic IC that includes one independent op-amp and another op-amp foe which the non inv GTM data | | |
| 4 | GSC1118 | 1A Positive Low Dropout Fixed-mode Regulator
ISSUED DATE :2005/07/11 REVISED DATE :2005/10/04B
G S C 111 8
1A Positive Low Dropout Fixed-mode Regulator With EN Function Description
The GSC1118 is a low dropout positive fixed-mode regulator with minimum of 1A output current capability. The product is specifically designed t GTM regulator | | |
| 5 | GSC1384 | NPN EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2003/10/24 REVISED DATE :2004/11/29B
GSC1384
Description Features
N P N E P I TA X I A L P L A N A R T R A N S I S T O R
The GSC1384 is designed for power amplifier and driver.
*Low collector to emitter saturation voltage VCE(sat). *Complementary pair with GSA684 GTM transistor | | |
| 6 | GSC1473A | NPN SILICON TRANSISTOR
ISSUED DATE :2005/04/15 REVISED DATE :2006/03/21B
GSC1473A
Description Features
NPN SILICON TRANSISTOR
The GSC1473A is designed for general amplification. High Collector to Emitter Voltage VCEO High Transition Frequency fT
D
Package Dimensions
E S1
TO-92
A
S E A T IN G PL GTM transistor | | |
| 7 | GSC1815 | NPN SILICON TRANSISTOR
CORPORATION
GSC1815
Description Features
*Complementary to GSA1015
ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B
NPN EPITAXIAL PLANAR TANSISTOR
The GSC1815 is designed for use in driver stage of AF amplifier and general purpose applications.
Package Dimensions
D E S1
TO GTM transistor | | |
| 8 | GSC20-12 | 20 WATT GLOBAL PERFORMANCE SWITCHERS 20 WATT GLOBAL PERFORMANCE SWITCHERS
GLOBAL PERFORMANCE SWITCHERS Summary: • Industry’s smallest 20 W switcher • Business-card size (2.0 x 3.5 x 0.71”) • Approved to UL60950, CSA-C22.2 No. 60950, EN60950, IEC60950 with CB Certificate • EMI FCC Class B, CISPR22B • Overvoltage protecti  SL Power Electronics data | | |
| 9 | GSC20-15 | 20 WATT GLOBAL PERFORMANCE SWITCHERS 20 WATT GLOBAL PERFORMANCE SWITCHERS
GLOBAL PERFORMANCE SWITCHERS Summary: • Industry’s smallest 20 W switcher • Business-card size (2.0 x 3.5 x 0.71”) • Approved to UL60950, CSA-C22.2 No. 60950, EN60950, IEC60950 with CB Certificate • EMI FCC Class B, CISPR22B • Overvoltage protecti SL Power Electronics data | |
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