Datasheet GS66502B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GS66502B	650V enhancement mode GaN transistor GS66502B, GS66504B 650V enhancement mode GaN transistors PRELIMINARY DATASHEET Features – 650V enhancement mode power switch – Ultra low FOM Island Technology™ die – Low inductance GaNPX™ package – Reverse current capability – Integral source sense – Zero reverse recovery loss – R	GaN Systems

GS665 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GS66508P	650V enhancement mode GaN transistor GS66508P 650V enhancement mode GaN transistor PRELIMINARY DATASHEET Features – 650V enhancement mode power switch – Ultra low FOM Island Technology™ die – Low inductance GaNPX™ package – Reverse current capability – Zero reverse recovery charge – Source-sense for	GaN Systems
GS66506T	Top cooled 650V enhancement mode GaN transistor GS66506T Top cooled 650V enhancement mode GaN transistor PRELIMINARY DATASHEET Features – 650V enhancement mode power switch – Top cooled configuration – Ultra low FOM Island Technology™ die – Low inductance GaNPX™ package – Reverse current capability – Integral	GaN Systems
GS66508T	Top cooled 650V enhancement mode GaN transistor GS66508T Top cooled 650V enhancement mode GaN transistor PRELIMINARY DATASHEET Features – 650V enhancement mode power switch – Top cooled configuration – Ultra low FOM Island Technology™ die – Low inductance GaNPX™ package – Reverse current capability – Integral	GaN Systems

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