データシート PDF 検索 - DataSheet.jp

GS358 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
1 GS358

Dual Operational Amplifiers

Dual Operational Amplifiers JAN. 2010 Product Description The GS358 consists of two independent, high gain, internally frequency compensated operational amplifiers which were designed specifically to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the low power supply current drains in independent of th

Globaltech
Globaltech
GS358 データシート pdf



GS Datasheet ( データシート ) - 検索結果

部品番号 部品説明 メーカ PDF
GS8662Q18E-250

72Mb SigmaQuad-II Burst

Preliminary GS8662Q08/09/18/36E-300/250/200/167 165-Bump BGA Commercial Temp Industrial Temp Features • Simultaneous Read and Write SigmaQuad™ Interface • JEDEC-standard pinout and package • Dual Double Data Rate interface • Byte Write controls sampl

GSI Technology
GSI Technology
GS358 データシート pdf
GS8160Z36T-250I

18Mb Pipelined and Flow Through Synchronous NBT SRAM

GS8160Z18/36T-250/225/200/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp Features • NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs

ETC
ETC
GS358 データシート pdf
GSAC-xxCCC2

AC/DC Single/Multirange CHARGER

® JOSEPH AC/DC Single/Multirange CHARGER Tentative data FEATURES LINE VOLTAGE 230 VAC. ALSO AVAILABLE THE MULTIRANGE VERSION 90-264VAC SINGLE OUTPUT MAX 4W DESIGNED FOR ON LINE CHARGING OF MOBILE PHONES EMC COMPLIANCE ACCORDING TO EU AND US DIRECTIVES SAFETY EN60950 APPROVAL A

STMicroelectronics
STMicroelectronics
GS358 データシート pdf
GS8342Q18BD-300

36Mb SigmaQuad-II Burst of 2 SRAM

165-Bump BGA Commercial Temp Industrial Temp GS8342Q08/09/18/36BD-357/333/300/250 36Mb SigmaQuad-IITM Burst of 2 SRAM 357 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Simultaneous Read and Write SigmaQuad™ Interface • JEDEC-standard pinout and package • Dual

GSI Technology
GSI Technology
GS358 データシート pdf
GS138K

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/10/11 REVISED DATE : GS138K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 50V 2 640mA The GS138K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient

GTM
GTM
GS358 データシート pdf
GS4576C36GL

576Mb CIO Low Latency DRAM

GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM (LLDRAM II) 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features • Pin- and function-compatible with Micron RLDRAM® II • 533 MHz DDR ope

GSI Technology
GSI Technology
GS358 データシート pdf
GS81302D06GE-350

144Mb SigmaQuad-II+ Burst of 4 SRAM

GS81302D06/11/20/38E-500/450/400/350 165-Bump BGA Commercial Temp Industrial Temp 144Mb SigmaQuad-II+ Burst of 4 SRAM 500 MHz–350 MHz 1.8 V VDD 1.8 V or 1.5 V I/O Features • 2.5 Clock Latency • Simultaneous Read and Write SigmaQuad™ Interface • JEDEC-standard pinout

GSI Technology
GSI Technology
GS358 データシート pdf


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