Datasheet GP401DDS18 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GP401DDS18	Low VCE(SAT) Dual Switch IGBT Module Preliminary Information GP401DDS18 GP401DDS18 Low VCE(SAT) Dual Switch IGBT Module Preliminary Information DS5272-3.0 January 2001 FEATURES s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 4	Dynex Semiconductor

GP401DD Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GP401DDS18	Low VCE(SAT) Dual Switch IGBT Module Preliminary Information GP401DDS18 GP401DDS18 Low VCE(SAT) Dual Switch IGBT Module Preliminary Information DS5272-3.0 January 2001 FEATURES s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max)	Dynex Semiconductor
GP401DDM18	Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information GP401DDM18 GP401DDM18 Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information DS5397-1.2 January 2001 FEATURES s s s s s Low VCE(SAT) 400A Per Switch High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS	Dynex Semiconductor

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