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Datasheet GP401 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | GP401 | 4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. GPPD-400-1B
4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES
FEATURES MECHANICAL SPECIFICATION
R
½¬¾À¿HÁ°½{ÂÄÃÅ Æ°ÇÉÈËÊ ÌÀÈËÍ Î |
DIOTEC |
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3 | GP401DDM18 | Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information GP401DDM18
GP401DDM18
Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information
DS5397-1.2 January 2001
FEATURES
s s s s s
Low VCE(SAT) 400A Per Switch High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) |
Dynex Semiconductor |
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2 | GP401DDS18 | Low VCE(SAT) Dual Switch IGBT Module Preliminary Information GP401DDS18
GP401DDS18
Low VCE(SAT) Dual Switch IGBT Module Preliminary Information
DS5272-3.0 January 2001
FEATURES
s s s s
Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 2.6V 4 |
Dynex Semiconductor |
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1 | GP401LSS18 | Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information GP401LSS18
GP401LSS18
Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information
DS5288-1.3 January 2000
The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitab |
Dynex Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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