Datasheet GP200MHS18 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GP200MHS18	Half Bridge IGBT Module GP200MHS18 GP200MHS18 Half Bridge IGBT Module DS5304-3.1 January 2001 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 200A 400A APPLICATIONS s s s s High	Dynex Semiconductor

GP200MH Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GP200MHS12	Half Bridge IGBT Module GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 DS5296-1.5 November 2000 FEATURES s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (ma	Dynex Semiconductor
GP200MHS18	Half Bridge IGBT Module GP200MHS18 GP200MHS18 Half Bridge IGBT Module DS5304-3.1 January 2001 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 200A 400A APPLICA	Dynex Semiconductor

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