GP1C251 データシート PDFこの部品の機能は「High Speed Type PlastIC Fiber OptICs With Built-in Amp.」です。 |
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部品番号 |
GP1C251 High Speed Type Plastic Fiber Optics with Built-in Amp. Gp1F40T1 /Gpl F40RI /Gplc251 GPlF40T1/GPlF40Rl/ :;=::: GP1C251 H Features 1. High speed optical data transmission ;Pl F40T1 /GP1 F40R1 Type Plastic Hber Built-in Amp. 9 Outine Dimensions (Unit : m Sharp Electrionic Components |
文字列「 GP1C251 」「 1C251 」で始まる検索結果です。 |
部品説明 |
2SC1251 NPN SILICON RF POWER TRANSISTOR 2SC1251 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The 2SC1251 is a Common Emitter Device Designed for High Linearity Class A Amplifiers up to 2.0 GHz. FEATURES INCLUDE: • Direct Replacement for NE74020 • High Gain - 10 dB min. @ 1.0 GHz • Gold Metalization PACKAGE ST Advanced Semiconductor |
2SD1251 Silicon NPN triple diffusion junction type(For power amplification) Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type For power amplification 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q 10.5min. Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fi Panasonic Semiconductor |
2SD1251 Silicon NPN Triple Diffusion Junction Type SMD Type Transistors Silicon NPN Triple Diffusion Junction Type 2SD1251,2SD1251A TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Wide area of safe operation. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2 Kexin |
2SD1251A Silicon NPN triple diffusion junction type(For power amplification) Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type For power amplification 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q 10.5min. Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fi Panasonic Semiconductor |
2SD1251A Silicon NPN Triple Diffusion Junction Type SMD Type Transistors Silicon NPN Triple Diffusion Junction Type 2SD1251,2SD1251A TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Wide area of safe operation. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2 Kexin |
5SMX12H1251 IGBT-Die 9&( ,& 9 $ ,*%7'LH 60;+ 'LH VL]H [ PP Doc. No. 5SYA1607-01 Aug 02 /RZ ORVV WKLQ ,*%7 GLH +LJKO UXJJHG 637 GHVLJQ /DUJH IURQW ERQGDEOH DUHD (Tj = 25°C, unless specified otherwise) 6PERO VCES IC ICM Tj Limited by Tjmax &RQGLWLRQV 9DOXHV 1200 50 100 -40 ABB |
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