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Datasheet GP1600FSM18 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 GP1600FSM18   Hi-Reliability Single Switch IGBT Module

GP1600FSM18 GP1600FSM18 Hi-Reliability Single Switch IGBT Module Replaces May 2000 version, DS5361-1.1 DS5361-2.3 January 2001 FEATURES s s s s High Thermal Cycling Capability 1600A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max
 Dynex Semiconductor
Dynex Semiconductor		 datasheet GP1600FSM18 pdf

GP1600FS Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
GP1600FSS18

Single Switch IGBT Module

GP1600FSS18 GP1600FSS18 Single Switch IGBT Module Replaces January 2000 version, DS5136-3.0 DS5176-4.2 January 2001 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1600A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (m
 Dynex Semiconductor
Dynex Semiconductor		 datasheet pdf - Dynex Semiconductor
GP1600FSS12

Powerline N-Channel Single Switch IGBT Module Advance Information

GP1600FSS12 GP1600FSS12 Powerline N-Channel Single Switch IGBT Module Advance Information Replaces October 1999 version, DS5173-3.0 DS5173-4.0 January 2000 The GP1600FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) modul
 Dynex Semiconductor
Dynex Semiconductor		 datasheet pdf - Dynex Semiconductor
GP1600FSM18

Hi-Reliability Single Switch IGBT Module

GP1600FSM18 GP1600FSM18 Hi-Reliability Single Switch IGBT Module Replaces May 2000 version, DS5361-1.1 DS5361-2.3 January 2001 FEATURES s s s s High Thermal Cycling Capability 1600A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES
 Dynex Semiconductor
Dynex Semiconductor		 datasheet pdf - Dynex Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

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