GP120 データシート PDFこの部品の機能は「Pptc Thermistors」です。 |
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部品番号 |
GP120 PPTC Thermistors GPxxx Series PPTC Thermistors (PPTC Resettable Fuses) Shenzhen Goodpoly Electron Co., Ltd. ¡÷ ¡÷ ¡÷ Radial leaded devices Very high voltage surge capabilities Available in lead-free version Goodpoly |
文字列「 GP120 」「 120 」で始まる検索結果です。 |
部品説明 |
GP1200 (GP1xxx) High Voltage Diode Rectifiers DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 a D . VOIDw FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION w (Solder Voids: Typical < 2%, Max. < 10% of Die Area) w LOW FORWARD VO Diotec Electronics |
GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 DS5308-2.1 February 2001 FEATURES s s s High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS Dynex Semiconductor |
GP1200FSM18 Hi-Reliability Single Switch IGBT Module GP1200FSM18 GP1200FSM18 Hi-Reliability Single Switch IGBT Module DS5410-1.2 January 2001 FEATURES s s s s High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates 1200A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) Dynex Semiconductor |
GP1200FSS18 Single Switch IGBT Module GP1200FSS18 GP1200FSS18 Single Switch IGBT Module Replaces February 2000 version, DS5260-2.0 DS5260-3.1 January 2001 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200A Per Module KEY PARAMETERS VCES (typ) VCE(sat) ( Dynex Semiconductor |
GP1201FSS18 Single Switch Low V IGBT Module GP1201FSS18 GP1201FSS18 Single Switch Low VCE(SAT) IGBT Module DS5411-1.1 January 2001 FEATURES s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) I Dynex Semiconductor |
02N120 SKP02N120 www.DataSheet4U.net SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Techno Infineon Technologies |
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