GJ6M データシート PDFこの部品の機能は「Diode ( Rectifier )」です。 |
検索結果を表示する |
部品番号 |
GJ6M Diode ( Rectifier ) American Microsemiconductor |
文字列「 GJ6 」「 6M 」で始まる検索結果です。 |
部品説明 |
GJ60-940 Diode ( Rectifier ) American Microsemiconductor |
GJ60L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Pb Free Plating Product ISSUED DATE :2005/02/22 REVISED DATE :2005/12/12B GJ60L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 13m 50A The GJ60L02 provide the designer with the best combination of fast switching, ruggedized device design, GTM |
GJ60N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Pb Free Plating Product ISSUED DATE :2004/03/03 REVISED DATE :2005/10/19C GJ60N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 16.5m 55A The GJ60N03 provide the designer with the best combination of fast switching, ruggedized device design GTM |
GJ60T03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Pb Free Plating Product ISSUED DATE :2005/11/24 REVISED DATE : GJ60T 03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 12m 45A Description The GJ60T03 provide the designer with the best combination of fast switching, ruggedized device desig GTM |
GJ6679 P-CHANNEL ENHANCEMENT MODE POWER MOSFET Pb Free Plating Product ISSUED DATE :2005/08/04 REVISED DATE : GJ6679 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 9m -75A The GJ6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resis GTM |
.4M.64FR10 Diode ( Rectifier ) American Microsemiconductor |
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