GJ3055S データシート PDFこの部品の機能は「N-channel Enhancement Mode Power Mosfet」です。 |
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部品番号 |
GJ3055S N-CHANNEL ENHANCEMENT MODE POWER MOSFET www.Datasheet.jp Pb Free Plating Product ISSUED DATE :2006/05/19 REVISED DATE :2006/11/09B GJ3055S N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 25m 18A Description The GJ3055S GTM |
文字列「 GJ3055 」「 3055S 」で始まる検索結果です。 |
部品説明 |
GJ3055 N-Channel Enhancement Mode Power MOSFET Pb Free Plating Product ISSUED DATE :2003/07/31 REVISED DATE :2007/01/25D GJ3055 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 26m 15A Description The GJ3055 provide the designer with the best combination of fast switching, ruggedized devi GTM |
2N3055 POWER TRANSISTORS(15A/50V/115W) A A A Mospec Semiconductor |
2N3055 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055/D Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc • Collector–Emitter Saturation Volt Motorola Inc |
2N3055 60V, 15A, NPN SILICON POWER TRANSISTORS TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector-emitter saturation voltage • Complementary NPN - PNP transistors Applications • General purpose • Audio amplifier Descrip STMicroelectronics |
2N3055 NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES Siemens Semiconductor Group |
2N3055 COMPLEMENTARY SILICON POWER TRANSISTORS Boca Semiconductor Corp. (BSC) http://www.bocasemi.com A http://www.bocasemi.com A http://www.bocasemi.com Boca Semiconductor Corporation |
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