GJ1952 データシート PDFこの部品の機能は「PNP High Speed Switching Transistor」です。 |
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部品番号 |
GJ1952 PNP HIGH SPEED SWITCHING TRANSISTOR www.Datasheet.jp ISSUED DATE :2005/10/03 REVISED DATE : GJ1952 Description Features PNP HIGH SPEED SWITCHING TRANSISTOR The GJ1952 is designed for high speed switching applications. Low saturati GTM |
文字列「 GJ1952 」「 1952 」で始まる検索結果です。 |
部品説明 |
2SA1952 High-speed Switching Transistor (−60V/ −5A) 2SA1952 Transistors High-speed Switching Transistor (−60V, −5A) 2SA1952 zFeatures 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC/IB = −3/−0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103. zExternal dim ROHM Semiconductor |
A1952 PNP Transistor - 2SA1952 2SA1952 Transistors High-speed Switching Transistor (−60V, −5A) 2SA1952 zFeatures 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC/IB = −3/−0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103. zExternal dim ROHM Semiconductor |
AIC1952 Low-Dropout 300mA Linear Regulator AIC1952 Dual Output Low ESR Cap. Low-Dropout FEATURES Up to 300mA Output Current for Each LDO. Low Quiescent Current : 50µA (VOUT1 and VOUT2 Enable Mode). Low Dropout:200mV at 300mA Load Current and 3.3V Output Voltage. High PSRR:70dB at 1kHz. Ind Analog Intergrations Corporation |
ALN1952 Internally Matched LNA Module plerowTM ALN1952 Internally Matched LNA Module Description The plerowTM ALN-series is the compactly designed surface-mount module for the use of the LNA with or without the following gain blocks in the infrastructure equipment of the mobile wireless (CDMA, GS Advanced Semiconductor |
BTA1952E3 Low Vcesat PNP Epitaxial Planar Transistor CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C601E3-A Issued Date : 2004.09.16 Revised Date : Page No. : 1/4 BTA1952E3 Features • Low VCE(sat), VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A • Excellent DC curren Cystech Electonics Corp |
BTA1952I3 Low Vcesat PNP Epitaxial Planar Transistor CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 1/ 5 BTA1952I3 Features BVCEO IC RCESAT -100V -5A 150mΩ • Low VCE(sat), VCE(sat)=-0.45 V (typical), at Cystech Electonics Corp |
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