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GJ1952 データシート PDF

この部品の機能は「PNP High Speed Switching Transistor」です。


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部品番号
GJ1952

PNP HIGH SPEED SWITCHING TRANSISTOR


www.Datasheet.jp ISSUED DATE :2005/10/03 REVISED DATE : GJ1952 Description Features PNP HIGH SPEED SWITCHING TRANSISTOR The GJ1952 is designed for high speed switching applications. Low saturati


GTM
GTM

データシート pdf



文字列「 GJ1952 」「 1952 」で始まる検索結果です。

部品説明

2SA1952

High-speed Switching Transistor (−60V/ −5A)

2SA1952 Transistors High-speed Switching Transistor (−60V, −5A) 2SA1952 zFeatures 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC/IB = −3/−0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103. zExternal dim

ROHM Semiconductor
ROHM Semiconductor

 データシート pdf


A1952

PNP Transistor - 2SA1952

2SA1952 Transistors High-speed Switching Transistor (−60V, −5A) 2SA1952 zFeatures 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC/IB = −3/−0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103. zExternal dim

ROHM Semiconductor
ROHM Semiconductor

 データシート pdf


AIC1952

Low-Dropout 300mA Linear Regulator

AIC1952 Dual Output Low ESR Cap. Low-Dropout  FEATURES  Up to 300mA Output Current for Each LDO.  Low Quiescent Current : 50µA (VOUT1 and VOUT2 Enable Mode).  Low Dropout:200mV at 300mA Load Current and 3.3V Output Voltage.  High PSRR:70dB at 1kHz.  Ind

Analog Intergrations Corporation
Analog Intergrations Corporation

 データシート pdf


ALN1952

Internally Matched LNA Module

plerowTM ALN1952 Internally Matched LNA Module Description The plerowTM ALN-series is the compactly designed surface-mount module for the use of the LNA with or without the following gain blocks in the infrastructure equipment of the mobile wireless (CDMA, GS

Advanced Semiconductor
Advanced Semiconductor

 データシート pdf


BTA1952E3

Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C601E3-A Issued Date : 2004.09.16 Revised Date : Page No. : 1/4 BTA1952E3 Features • Low VCE(sat), VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A • Excellent DC curren

Cystech Electonics Corp
Cystech Electonics Corp

 データシート pdf


BTA1952I3

Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 1/ 5 BTA1952I3 Features BVCEO IC RCESAT -100V -5A 150mΩ • Low VCE(sat), VCE(sat)=-0.45 V (typical), at

Cystech Electonics Corp
Cystech Electonics Corp

 データシート pdf

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