GJ15N03 データシート PDFこの部品の機能は「N-channel Enhancement Mode Power Mosfet」です。 |
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部品番号 |
GJ15N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET www.Datasheet.jp Pb Free Plating Product ISSUED DATE :2005/01/25 REVISED DATE : GJ15N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 80m 15A The GJ15N03 provide the designer wi GTM |
文字列「 GJ15N03 」「 15N03 」で始まる検索結果です。 |
部品説明 |
15N03GH AP15N03GH AP15N03GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 80mΩ 15A Description The TO-252 package is universally preferred for a Advanced Power Electronics |
15N03H AP15N03H AP15N03H/J Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 80mΩ 15A ▼ Fast Switching G S Description The TO-252 package is universally preferred for all Advanced Power Electronics |
15N03K AP15N03K AP15N03H/J Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 80mΩ 15A Description The TO-252 package is universally Advanced Power Electronics |
15N03L IPP15N03L IPP15N03L IPB15N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 12.6 42 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superi Infineon Technologies AG |
2SA1503 EPITAXIAL PLANAR SILICON TRANSISTORS www.datasheet.jp Datasheet pdf - http://www.DataSheet4U.net/ www.datasheet.jp Datasheet pdf - http://www.DataSheet4U.net/ Sanyo Semicon Device |
2SB1503 Silicon PNP epitaxial planar type Darlington(For power amplification) Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 6.0 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 Unit: mm 26.0±0.5 10.0 s Features q q q Optimum for 110W HiFi output High foward current transfer ratio hFE: 5000 Panasonic Semiconductor |
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