GE20N03 データシート PDFこの部品の機能は「N-channel Enhancement Mode Power Mosfet」です。 |
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部品番号 |
GE20N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET www.Datasheet.jp Pb Free Plating Product ISSUED DATE :2005/06/28 REVISED DATE : GE20N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 52m 20A The GE20N03 provide the designer wi GTM |
文字列「 GE20N03 」「 20N03 」で始まる検索結果です。 |
部品説明 |
2003 HIGH-VOLTAGE/HIGH-CURRENTDARLINGTONARRAYS 2003 THRU 2024 HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 Ideally suited for interfacing between low-level logic circuitry and multiple peripheral power loads, the Series ULN20xxA/L high-voltage, high-current Darlington arrays feature co AllegroMicroSystems |
2003 Microwave CW Bipolar / 3 Watts - 28 Colts / 2000 Mhz Acrian |
2003 Case Outline 55BT-1 / Style 1 2003 3 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION The 2003 is a COMMON BASE transistor capable of providing 3 Watts Class C, RF output power at 2000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. Th GHZ Technology |
20N03HL MTD20N03HL MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N03HDL/D Designer's HDTMOS E-FET .™ High Density Power FET DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanc Motorola Semiconductors |
20N03L IPD20N03L IPD20N03L IPU20N03L OptiMOS® Buck converter series Feature •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) •Excellent Gate Charge x R DS(on) product (FOM) •Superio Infineon Technologies |
2SC2003 NPN SILICON TRANSISTOR NEC |
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