Datasheet GDSSF2814E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GDSSF2814E	MOSFET ( Transistor ) DESCRIPTION The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GDSSF2814E GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @	GOOD-ARK

GDSSF28 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GDSSF2816EB	MOSFET ( Transistor ) DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V. GDSSF2816EB GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ V	GOOD-ARK
GDSSF2814E	MOSFET ( Transistor ) DESCRIPTION The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GDSSF2814E GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=	GOOD-ARK

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Número de pieza	Descripción	Fabricantes	PDF
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