GCQ30A03L データシート PDFこの部品の機能は「Sbd」です。 |
検索結果を表示する |
部品番号 |
GCQ30A03L SBD 30A Avg. 30 Volts SBD GCQ30A03L INSTANTANEOUS FORWARD CURRENT (A) AVERAGE REVERSE POWER DISSIPATION (W) 100 50 20 10 5 2 1 0 FORWARD CURRENT VS. VOLTAGE GCQ30A03L (per Arm) Tj=25°C Tj=150°C Nihon Inter Electronics |
文字列「 GCQ30A03 」「 30A03L 」で始まる検索結果です。 |
部品説明 |
13003 NPN Epitaxial Silicon Transistor 13003 NPN Epitaxial Silicon Transistor TO-220 HIGH VOLTAGE SWITCHING APPLICATIONS Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=1500mW Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C Elite Enterprises |
13003 HIGH VOLTAGE AND HIGH SPEED SWITCH 13003 STANDARD · · 65 HSiN 13003 PEFORMANCE CURVES 1 Ic(A) SOA (DC) 120 100 % Pc Tj 0.1 80 IS/B 60 Ptot 0.01 40 20 0.001 1 hFE 10 100 Vce(V) 0 1000 0 50 100 150 Tj( ) 200 hFE - Ic 100 100 hFE hFE - Ic Tj=125 Tj=25 Tj=125 Tj=25 10 Tj= − 40 HSiN |
13003ADA NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers h Unisonic Technologies |
13003ADG NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 13003ADG Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 Unisonic Technologies |
13003BDG NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 13003BDG Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003BDG is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers hi Unisonic Technologies |
13003BR MJE13003BR MJE13003 FEATURES Power dissipation PCM : 1.25 NPN SILICON TRANSISTOR TO 126 W Tamb=25 1.BASE 2.COLLECTOR 3.EMITTER Collector current 1.5 A ICM : Collector-base voltage V(BR)CBO : 700 V 123 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown ETC |
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