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Datasheet GB20NB32LZ Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GB20NB32LZ | N-CHANNEL PowerMESH TM IGBT
STGB20NB32LZ STGB20NB32LZ-1
N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE STGB20NB32LZ STGB20NB32LZ-1
s s s s s
VCES CLAMPED CLAMPED
VCE(sat) < 2.0 V < 2.0 V
IC 20 A 20 A
3 1
3 12
POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VO |  ST Microelectronics | igbt |
| 2 | GB20NB32LZ-1 | N-CHANNEL PowerMESH TM IGBT
STGB20NB32LZ STGB20NB32LZ-1
N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE STGB20NB32LZ STGB20NB32LZ-1
s s s s s
VCES CLAMPED CLAMPED
VCE(sat) < 2.0 V < 2.0 V
IC 20 A 20 A
3 1
3 12
POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VO | ST Microelectronics | igbt |
GB2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GB20-602A | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | GB200 | SILICON CONTROLLED RECTIFIERS GA200-GA201A
High-reliability discrete products and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), stan  Digitron Semiconductors rectifier | | |
| 3 | GB200 | SCRs Nanosecond Switching/ Planar Microsemi Corporation data | | |
| 4 | GB200A | SILICON CONTROLLED RECTIFIERS GA200-GA201A
High-reliability discrete products and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), stan Digitron Semiconductors rectifier | | |
| 5 | GB200A | SCRs Nanosecond Switching/ Planar Microsemi Corporation data | | |
| 6 | GB200TS60NPBF | Ultrafast Speed IGBT www.DataSheet.co.kr
GB200TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A
FEATURES
• Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 μs short circuit capability •  Vishay Siliconix igbt | | |
| 7 | GB201 | SILICON CONTROLLED RECTIFIERS GA200-GA201A
High-reliability discrete products and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), stan Digitron Semiconductors rectifier | |
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